US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including backside isolation structure and placeholder isolation structure" (New York, Virginia Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,219, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea). "Semiconductor device including backside isolation stru... Read More

US Patent Issued to International Business Machines on Sept. 8 for "Nanosheet transistor device with bottom isolation" (New York, California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,220, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet transistor device with bottom isol... Read More

US Patent Issued to Intel on Sept. 8 for "Integrated circuit structures with backside self-aligned conductive source or drain contact" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,221, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures with backside self-aligned conduc... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,222, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More

US Patent Issued to HON HAI PRECISION INDUSTRY, Hon Young Semiconductor on Sept. 8 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,223, issued on Sept. 8, was assigned to HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei City, Taiwan) and Hon Young Semiconductor Corp. (Hsi... Read More

US Patent Issued to Infineon Technologies on Sept. 8 for "Semiconductor device having macro cells" (Austrian, German Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,224, issued on Sept. 8, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device having macro cells" was invent... Read More

US Patent Issued to HITACHI ENERGY on Sept. 8 for "Gate-commuted thyristor cell with a base region having a varying thickness" (British, Swiss, Czech Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,225, issued on Sept. 8, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland). "Gate-commuted thyristor cell with a base region having a... Read More

US Patent Issued to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY on Sept. 8 for "Transistor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,226, issued on Sept. 8, was assigned to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY Co. LTD. (Suzhou, China). "Transistor device and manufac... Read More

US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Silicon carbide semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,227, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method of manuf... Read More

US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Sept. 8 for "Nitride semiconductor device and method of manufacturing nitride semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,228, issued on Sept. 8, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Niss... Read More

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