US Patent Issued to ZHIXIN SEMICONDUCTOR (HANGZHOU) on Feb. 3 for "Method for improving transverse magnetic (TM) mode light extraction efficiency of ultraviolet alingan light-emitting diode" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,416, issued on Feb. 3, was assigned to ZHIXIN SEMICONDUCTOR (HANGZHOU) Co. LTD (Zhejiang, China).

"Method for improving transverse magnetic (TM) mode light extraction efficiency of ultraviolet alingan light-emitting diode" was invented by Xiaohui Huang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method for improving transverse magnetic (TM) mode light extraction efficiency of an ultraviolet AlInGaN light-emitting diode. As the Al content in the AlInGaN light-emitting diode increases, the wavelength decreases gradually. Meanwhile, light extraction dominated by a TE mode is switched to light extraction dominated by a ...