ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,787, issued on Oct. 6, was assigned to Yield Microelectronics Corp. (Zhubei City, Taiwan).

"Low-power programmable erasable nonvolatile memory" was invented by Yu-Ting Huang (Zhubei City, Taiwan), Chi-Pei Wu (Zhubei City, Taiwan) and Ya-Ting Fan (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A low-power programmable erasable nonvolatile memory includes common-source lines, word lines, bit lines, memory arrays, a first electronic switch, a second electronic switch, a decoding device, a first storage capacitor, a second storage capacitor, and a voltage boosting circuit. Each memory array is coupled to one common-source line, one wo...