US Patent Issued to YANSHAN UNIVERSITY on March 17 for "Copper oxide with hollow porous structure, and preparation method therefor and use thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,577,123, issued on March 17, was assigned to YANSHAN UNIVERSITY (Qinhuangdao, China).

"Copper oxide with hollow porous structure, and preparation method therefor and use thereof" was invented by Faming Gao (Qinhuangdao, China), Yisong Zhao (Qinhuangdao, China), Kuo Wei (Qinhuangdao, China), Xue Zuo (Qinhuangdao, China) and Yuping Mi (Qinhuangdao, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A copper oxide with a hollow porous structure, a preparation method therefor, and a use thereof are provided. The copper oxide with a hollow porous structure is of a hollow octahedral structure, and has a size of 200-400 nm and a specific surface area of 23....