US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 29 for "Memory device and operation thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,748,691, issued on Sept. 29, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and operation thereof" was invented by Xufeng Zhou (Wuhan, China), Zhipeng Dong (Wuhan, China) and Ke Ke (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes a block of memory cells, and a peripheral circuit coupled to the block of memory cells. The peripheral circuit is configured to, in an erase operation, pre-erase the block of memory cells, program the block of memory cells after pre-erasing the block of memory cells, and erase the block of memory cells after programming the block of m...