ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,095, issued on Sept. 22, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).
"Memory device and operation method thereof" was invented by Li Xiang (Wuhan, China) and Ke Liang (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, devices, and systems for managing memory devices are provided. In one aspect, a memory device can include a memory array and a peripheral circuit. The memory array can include a first and a second memory string. The peripheral circuit is configured to perform a first verification operation during a first loop of a program operation to program the first memory string. During a pre-pulse phase...