US Patent Issued to Yangtze Memory Technologies on Sept. 2 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,928, issued on Sept. 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Three-dimensional memory devices and fabricating methods thereof" was invented by Yuancheng Yang (Hubei, China), Dongxue Zhao (Hubei, China), Tao Yang (Hubei, China), Lei Liu (Hubei, China), Di Wang (Hubei, China), Kun Zhang (Hubei, China), Wenxi Zhou (Hubei, China), Zhiliang Xia (Hubei, China) and Zongliang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive la...