US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 2 for "Staircase formation in three-dimensional memory device" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,879, issued on Sept. 2, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Staircase formation in three-dimensional memory device" was invented by Yu Ting Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a stack including conductive layers and insulating layers alternatingly stacked in a first direction, a semiconductor channel extending through the stack in the first direction, and a staircase structure including sub-staircase structures in a second direction perpendicular to the first direction. One of the sub-staircase structures includes two portions arranged along the second direction...