US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 2 for "Memory devices having vertical transistors and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,339, issued on Sept. 2, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices having vertical transistors and methods for forming the same" was invented by Hongbin Zhu (Wuhan, China), Wei Liu (Wuhan, China) and Yanhong Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a peripheral circuit. The second semiconductor structure ...