US Patent Issued to Yangtze Memory Technologies on Sept. 16 for "Semiconductor device and its manufacturing method, memory and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,050, issued on Sept. 16, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor device and its manufacturing method, memory and memory system" was invented by Kun Zhang (Hubei, China), Wenxi Zhou (Hubei, China), Linchun Wu (Hubei, China), Zhiliang Xia (Hubei, China) and Zongliang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device including a stack structure and a first conductive pillar. The stack structure can include a plurality of interlayer insulating layers and gate layers arranged alternately along a stack direction, and stack structure an arra...