US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 6 for "Architecture and method for NAND memory operation" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,794, issued on Oct. 6, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Architecture and method for NAND memory operation" was invented by Kaijin Huang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method for erasing a memory device including memory cells, a first erase operation is performed on a selected memory cell of the memory cells. A first erase verifying operation is performed on the selected memory cell. A second erase verifying operation is performed on the selected memory cell. A second erase operation is performed on the selected memory cell based on results of the first erase verifying operation a...