US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Nov. 3 for "Interconnect structures of three-dimensional memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,285, issued on Nov. 3, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Interconnect structures of three-dimensional memory devices" was invented by Kun Zhang (Wuhan, China), Haojie Song (Wuhan, China), Kun Bao (Wuhan, China) and Zhiliang Xia (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, a slit structure, and a staircase local contact. The memory stack includes interleaved conductive layers and dielectric layers above t...