US Patent Issued to Yangtze Memory Technologies on Nov. 25 for "Three-dimensional NAND memory device and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,219, issued on Nov. 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional NAND memory device and method of forming the same" was invented by Shasha Liu (Hubei, China), Xiaoming Mao (Hubei, China), Jing Gao (Hubei, China) and Zongliang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first stack of alternating first word line layers and first insulating layers over a semiconductor layer. A first channel structure extends from the semiconductor layer and through a first array region of the first stack. A second stack of alternating second word line layers and secon...