US Patent Issued to Yangtze Memory Technologies on May 5 for "Memory, operation method of memory, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,441, issued on May 5, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory, operation method of memory, and memory system" was invented by XiangNan Zhao (Wuhan, China), SongMin Jiang (Wuhan, China), Tingze Wang (Wuhan, China) and Chenhui Li (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes a memory array and a peripheral circuit, wherein the memory array includes memory cells; the memory cells include a plurality of first memory cells coupled with a first selected word line, and a plurality of second memory cells coupled with a second selected word line; and the peripheral circuit is configured to: ...