US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 26 for "Memory device, memory system, and program operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,638,981, issued on May 26, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, and program operation method thereof" was invented by Xiangnan Zhao (Wuhan, China) and Hongtao Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array and peripheral circuits coupled to the memory cell array. The peripheral circuits are configured to perform twice program operations on one or more first memory cells in the memory cell array for storing cold data into the one or more first memory cells. The twice program operations include a first time program operation and a s...