US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 13 for "Three-dimensional memory device and methods for forming the same" (Chinese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,317, issued on May 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device and methods for forming the same" was invented by Mingkang Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure and a second semiconductor bonded with the first semiconductor structure. The first semiconductor structure includes an array of NAND memory strings, a semiconductor layer in contact with source ends of the array of NAND memory strings, an insulating layer in contact with the semiconductor layer, and a co...