US Patent Issued to Yangtze Memory Technologies on May 13 for "Memory devices, operation method thereof and memory system" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,299,332, issued on May 13, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory devices, operation method thereof and memory system" was invented by Lei Guan (Hubei, China), HongTao Liu (Hubei, China), Yuanyuan Min (Hubei, China), WenZhe Wei (Hubei, China) and Tingze Wang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for erasing a memory device. The method includes applying a word-line voltage to a word line of the memory device, wherein a first set of memory cells coupled to the word line are each configured to store a first number of bits data. The method also includes app...