US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 12 for "Memory devices having vertical transistors and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,328, issued on May 12, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices having vertical transistors and methods for forming the same" was invented by Wei Liu (Wuhan, China), Hongbin Zhu (Wuhan, China), Yanhong Wang (Wuhan, China) and Zichen Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and methods for forming the same are provided. The method includes: forming a plurality of first trenches having a first width during forming a plurality of grooves having a second width less than the first width, each of the plurality of first trenches and the plurality of grooves extending ...