US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 31 for "Memory, memory system, program method of memory, and electronic apparatus" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,287, issued on March 31, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory, memory system, program method of memory, and electronic apparatus" was invented by Hongtao Liu (Wuhan, China), Ying Huang (Wuhan, China), Lei Guan (Wuhan, China) and Lei Jin (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a memory, a memory system, a program method of a memory, and an electronic apparatus, relating to the technical field of memories. The memory includes a memory array and a peripheral circuit, wherein the memory array includes memory cells; the peripheral circuit is configured to perfo...