US Patent Issued to Yangtze Memory Technologies on March 17 for "Semiconductor device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,019, issued on March 17, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor device and fabrication method thereof" was invented by Hanxiao Li (Wuhan, China), Jinxing Chen (Wuhan, China), Guanglong Fan (Wuhan, China) and Yanli Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a memory cell wafer. The memory cell wafer includes a dielectric layer, a conductor layer over the dielectric layer, one or more through contacts penetrating through the dielectric layer and the conductor layer, and an isolator surrounding a region of the conductor layer and at least one of the one...