US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 17 for "Memory device, memory system, memory controller, and operation method" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,578,899, issued on March 17, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, memory controller, and operation method" was invented by Xingwei Tang (Wuhan, China), Guangchang Ye (Wuhan, China), Wen Luo (Wuhan, China) and Lu Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure include a memory device including: a memory cell array including a plurality of blocks. The blocks include a plurality of word lines, and a plurality of memory cells coupled to the plurality of word lines. The plurality of memory cells coupled to a same word line form a physical page....