US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 9 for "Peripheral structure arrangements of memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,651,627, issued on June 9, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Peripheral structure arrangements of memory devices and methods for forming the same" was invented by Zhichao Du (Wuhan, China), Yu Wang (Wuhan, China), Daesik Song (Wuhan, China), Xu Hou (Wuhan, China) and Danyang Li (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array structure and a peripheral structure. The memory array structure includes at least one memory bank, and each memory bank includes a plurality of memory blocks. The peripheral structure includes a word line driver circuit and a sense amplifier cir...