US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 30 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,284, issued on June 30, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Di Wang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region and word line pick-up structures in a first portion of a second region. The first region and the second region are arranged in a first direction. The 3D memory device also includes word lines each extending in the fir...