US Patent Issued to Yangtze Memory Technologies on June 23 for "Memory devices and operating methods thereof, memory systems, and electronic devices" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,035, issued on June 23, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory devices and operating methods thereof, memory systems, and electronic devices" was invented by Jianjie Li (Wuhan, China), Yue Sheng (Wuhan, China), Weijun Wan (Wuhan, China), Ke Liang (Wuhan, China) and Qianqian Shi (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure provide a memory device and an operating method thereof, a memory system, and an electronic device. The memory device comprises: a memory cell array; and peripheral circuit coupled to the memory cell array through word lines and bit lines and c...