US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 23 for "Memory device, memory system, memory controller and operating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,034, issued on June 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, memory controller and operating method thereof" was invented by Xingwei Tang (Wuhan, China) and Guangchang Ye (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure provide a memory device, memory system, memory controller and operating method thereof. The memory device includes a memory cell with multiple storage bits, a preset number of the memory cells form one code word, and the multiple storage bits correspond to multiple pages respectively. The multiple stages include a first stage...