US Patent Issued to Yangtze Memory Technologies on June 2 for "Memory systems and operation methods thereof to improve wear leveling of a memory device" (Chinese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,645,365, issued on June 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory systems and operation methods thereof to improve wear leveling of a memory device" was invented by Jingsheng Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure provide a memory system and operation method thereof, a memory device and operation method thereof. In one example, the operation method for the memory system includes: obtaining a wear value of a system area and a wear value of a user area within a first period of time; and determining whether to reallocate virtual blocks in a first reserved area...