US Patent Issued to Yangtze Memory Technologies on June 16 for "Page buffers and operation methods thereof, memory devices, and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,658,226, issued on June 16, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Page buffers and operation methods thereof, memory devices, and memory systems" was invented by Weiwei He (Wuhan, China), Ke Liang (Wuhan, China) and Wei Huang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application disclose a page buffer including a plurality of latch circuits. Each latch circuit includes a resetting control circuit, a setting control circuit, a data transmission circuit, and a latch transmission circuit. The resetting control circuit is coupled to a first data node and configured to receive a first...