US Patent Issued to Yangtze Memory Technologies on July 7 for "Memory device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,406, issued on July 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and manufacturing method thereof" was invented by He Chen (Wuhan, China), Ziqun Hua (Wuhan, China) and Hongbin Zhu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device including providing a base wafer that includes a substrate, an insulation layer over the substrate, a sacrificial layer over the insulation layer, and a plurality of channel layers embedded in the sacrificial layer and the insulation layer, forming a plurality of grooves in the sacrificial layer each exposing a portion of the insulation ...