US Patent Issued to Yangtze Memory Technologies on July 28 for "Current bias circuit, memory device and memory system" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,694,936, issued on July 28, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Current bias circuit, memory device and memory system" was invented by Xinyue Zhang (Wuhan, China) and Ruxin Wei (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure disclose a current bias circuit, a memory device and a memory system. The current bias circuit includes: a voltage stabilizing circuit configured to output a second voltage through a second terminal of the voltage stabilizing circuit based on a first voltage received by a first terminal of the voltage stabilizing circuit; and a main circuit coupled to ...