US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 21 for "Staircase structure in three-dimensional memory device and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,453, issued on July 21, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Staircase structure in three-dimensional memory device and method for forming the same" was invented by Di Wang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zhong Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an example of the present disclosure, a three-dimensional (3D) memory device includes a memory array structure and a staircase structure. The staircase structure includes a plurality of stairs extending along a first lateral direction. The plurality of stairs include a stair including a conductor po...