US Patent Issued to Yangtze Memory Technologies on July 21 for "Dynamic flash memory (DFM) with channel first scheme" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,185, issued on July 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Dynamic flash memory (DFM) with channel first scheme" was invented by Di Wang (Wuhan, China), Lei Liu (Wuhan, China), Yuancheng Yang (Wuhan, China), Wenxi Zhou (Wuhan, China), Kun Zhang (Wuhan, China), Tao Yang (Wuhan, China), Dongxue Zhao (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a memory cell, a top contact coupled to the memory cell, and a bottom contact coupled to the memory cell. The memory cell can include a pillar, an insul...