US Patent Issued to Yangtze Memory Technologies on July 14 for "Stacked layers with filling structures" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,215, issued on July 14, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Stacked layers with filling structures" was invented by Qingyi Huang (Wuhan, China) and Zhen Pan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations of the present disclosure include a semiconductor structure comprising a stack structure comprising a first stack layer and a second stack layer stacked together, wherein a first region and a second region surrounding the first region are disposed in the stack structure, and a first surface of the first region and a first surface of the second region are coplanar; and a filling structur...