US Patent Issued to Yangtze Memory Technologies on July 14 for "Semiconductor device with staircase gate stack and sidewall isolation structure" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,766, issued on July 14, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor device with staircase gate stack and sidewall isolation structure" was invented by Zhen Guo (Hubei, China), Wei Xu (Hubei, China), Bin Yuan (Hubei, China), Chuang Ma (Hubei, China), Jiashi Zhang (Hubei, China) and ZongLiang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a memory stack of gate layers and insulating layers. The gate layers and the insulating layers are stacked alternatingly and are formed into stair steps in a staircase ...