US Patent Issued to Yangtze Memory Technologies on July 14 for "Memory device and operation method thereof, memory system, and storage medium" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,955, issued on July 14, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and operation method thereof, memory system, and storage medium" was invented by Wei Qi (Wuhan, China), Da Li (Wuhan, China), Ya Wang (Wuhan, China), Feng Xu (Wuhan, China), Yaoyao Tian (Wuhan, China), Wenping Chen (Wuhan, China) and Shuai Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some examples, a peripheral circuit is configured to: when performing a first read operation on memory cells coupled to a selected word line, apply a first pass voltage to a first word line, apply a second pass voltage to a second word lin...