US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 20 for "Semiconductor device having source leading-out contacts and source layer, memory device, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,466, issued on Jan. 20, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device having source leading-out contacts and source layer, memory device, and memory system" was invented by He Chen (Wuhan, China) and Lei Huang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, a memory device, and a memory system are provided. The semiconductor device includes an array device and source leading-out contacts. The array device includes channel structures and a source layer connected with the channel structures. The source leading-out contacts are connected with the source layer. The source ...