US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 20 for "Memory device, memory system, and method of operating the same" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,530,131, issued on Jan. 20, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, and method of operating the same" was invented by Teng Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a memory system includes performing a first read operation with a first read voltage of a first single read level, performing a first shift-read operation with the first read voltage plus a first offset voltage, performing a second shift-read operation with the first read voltage minus the first offset voltage, and in response to that a difference between first bit flip information of th...