US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 24 for "Three-dimensional storage having connecting structures" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,730, issued on Feb. 24, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional storage having connecting structures" was invented by Erwei Wang (Wuhan, China), Xiaofen Zheng (Wuhan, China) and Lixun Gu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a three-dimensional storage includes: providing a substrate; forming a first connecting layer and a first sacrificial layer; etching part of the first sacrificial layer to form first grooves and second grooves; forming first connecting structures in the first grooves and second connecting structures in the second grooves; forming a ...