US Patent Issued to Yangtze Memory Technologies on Feb. 24 for "Three-dimensional NAND memory device and system and method for performing read operations thereof" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,561,061, issued on Feb. 24, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Three-dimensional NAND memory device and system and method for performing read operations thereof" was invented by Yuanyuan Min (Hubei, China), HongTao Liu (Hubei, China), XiangNan Zhao (Hubei, China) and Lei Guan (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device that includes memory cells addressed by word lines and bit lines and a peripheral circuit for performing a read operation for the memory device. The peripheral circuit is configured to apply a read voltage to a selected word line and apply ...