US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 24 for "Semiconductor devices, memory devices, and methods for forming the same" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,794, issued on Feb. 24, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor devices, memory devices, and methods for forming the same" was invented by Liang Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a semiconductor device includes a substrate, a first trench isolation in the substrate, a first doped region formed below the first trench isolation, a second doped region formed in the substrate, and a first gate structure formed adjacent to the second doped region. The first doped region is an ion implantation region, and a distance between the first doped region and the second...