ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,031, issued on Feb. 24, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).
"Semiconductor device and method for manufacturing same" was invented by Zhaohui Tang (Wuhan, China), Lei Zhang (Wuhan, China), Yuting Zhou (Wuhan, China) and Si Qiao (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device is provided. The method includes the following. A substrate is provided. A stacked structure is formed on the substrate. The stacked structure includes first material layers and gate layers that are alternatively stacked. The stacked structure includes a giant block (GB) region and a s...