US Patent Issued to Yangtze Memory Technologies on Feb. 24 for "Operation method of memory device, memory device, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,561,073, issued on Feb. 24, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Operation method of memory device, memory device, and memory system" was invented by Zihao Deng (Wuhan, China) and Ling Chu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An operation method of a memory device includes: when a program temperature of a memory device is less than a temperature threshold, and during a process of programming a selected memory cell coupled with a first selected word line, applying a first program voltage to the first selected word line, applying a first pass voltage to a first target word line, and applying a secon...