US Patent Issued to Yangtze Memory Technologies on Feb. 24 for "Memory and its operation methods, memory systems, and electronic devices" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,218, issued on Feb. 24, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory and its operation methods, memory systems, and electronic devices" was invented by Wei Huang (Wuhan, China), Weiwei He (Wuhan, China) and Weijun Wan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The implementation of the present disclosure discloses a memory and its operation method, a memory system and an electronic device. The memory includes: a memory cell array and a page buffer, the page buffer is disposed corresponding to a bit line of the memory cell array, and the page buffer includes: a precharge and discharge circuit coupled ...