US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 17 for "Three-dimensional memory and its fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,621, issued on Feb. 17, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory and its fabrication method" was invented by Zhen Guo (Wuhan, China), Bin Yuan (Wuhan, China), Zongke Xu (Wuhan, China), Jiajia Wu (Wuhan, China), Beibei Li (Wuhan, China), Xiangning Wang (Wuhan, China), Zhu Yang (Wuhan, China) and Qiangwei Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a three-dimensional memory includes forming a laminated structure including stacked dummy gate layers and interlayer insulation layers on one side of a substrate. The respective adjacent dummy gate layers an...