US Patent Issued to Yangtze Memory Technologies on Feb. 17 for "Three dimensional (3D) memory device and fabrication method using self-aligned multiple patterning and airgaps" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,640, issued on Feb. 17, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Three dimensional (3D) memory device and fabrication method using self-aligned multiple patterning and airgaps" was invented by Jin Peng (Wuhan, China), Zuhui Zheng (Wuhan, China), Zheng Xiang (Wuhan, China) and Yanwei Shi (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a conductor/insulator stack over a substrate, configuring memory cells through the conductor/insulator stack, forming a conductive layer, removing a portion ...