US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 17 for "Memory device having cache storage unit for storage of current and next data pages and program operation thereof" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,635, issued on Feb. 17, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device having cache storage unit for storage of current and next data pages and program operation thereof" was invented by Weijun Wan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells in columns and rows, word lines respectively coupled to rows, bit lines respectively coupled to the columns, bit lines respectively coupled to the columns of the memory cells, and a peripheral circuit coupled to the array of memory cells through the bit lines and the word lines and configured to program a sele...