US Patent Issued to Yangtze Memory Technologies on Feb. 17 for "Memory device and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,276, issued on Feb. 17, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and method of forming the same" was invented by Wei Xie (Wuhan, China), Dongyu Fan (Wuhan, China), Di Wang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory device and formation method are provided. The memory device includes a stack structure; and a plurality of gate line slit structures vertically extending through the stack structure to divide the stack structure into a plurality of stack portions. The plurality of GLS structures exten...