US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 17 for "Decoder circuits, memory devices and its control method" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,624, issued on Feb. 17, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Decoder circuits, memory devices and its control method" was invented by Zhichao Du (Wuhan, China), Xuesong Shen (Wuhan, China) and Daesik Song (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Decoder circuit, memory device, and control method are disclosed. The decoder circuit includes a decoding circuit and a power supply control circuit including: a first transistor, its input is connected to a low-level voltage node, and its output outputs a first ground voltage; a second transistor, its input is connected to a high-level voltage node, and i...