ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,329, issued on Feb. 10, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).
"Vertical memory devices" was invented by Zhong Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China) and Zhiliang Xia (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack including gate layers and insulating layers alternately stacked along a first direction, channel structures located in an array region of the stack, a first staircase located at a first section in a connection region of the stack, the connection region and the array region arranged in a second direction perpendicular to the first direction, a secon...