US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 10 for "Semiconductor device having shallow trench isolation structures and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,690, issued on Feb. 10, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device having shallow trench isolation structures and fabrication method thereof" was invented by Quan Zhang (Wuhan, China), Lan Yao (Wuhan, China) and Lu Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming a first shallow trench isolation structure in a first region of a substrate and second shallow trench isolation structures in a second region of the substrate. The method also includes forming a mask layer over the substrate, the first shallow trench isolation str...