US Patent Issued to Yangtze Memory Technologies on Feb. 10 for "Memory devices and operating methods thereof, and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,627, issued on Feb. 10, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory devices and operating methods thereof, and memory systems" was invented by Zhipeng Dong (Wuhan, China), Xufeng Zhou (Wuhan, China) and Jianjie Li (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a memory array; the memory array includes memory cells and word lines coupled to the memory cells; and a peripheral circuit coupled to the memory array and configured to: perform a first read operation, wherein the first read operation includes: applying a first read voltage to a first word line of the word lines that bel...